Metal resistors having nitridized metal surface layers with different nitrogen content

ABSTRACT

A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The resulted resistances (and hence resisitivty) of the two metal resistors can be either the same or different. The semiconductor structure may include a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first metal layer portion and a first nitridized metal surface layer having a first nitrogen content. The semiconductor structure further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second metal layer portion and a second nitridized metal surface layer having a second nitrogen content that differs from the first nitrogen content.

BACKGROUND

The present application relates to a semiconductor structure and amethod of forming the same. More particularly, the present applicationrelates to a semiconductor structure containing at least a first metalresistor structure having a first nitrogen content and a second metalresistor structure having a second nitrogen content that differs fromthe first nitrogen content, and a method of forming such a semiconductorstructure.

A resistor is one of the most common electrical components, and is usedin almost every electrical device. In semiconductor device fabrication,it is well known to have thin film resistors embedded in theback-end-of-line (BEOL) structures of the chip through either adamascene approach or a subtractive etch method. BEOL thin filmresistors are generally preferred over other types of resistors becauseof the lower parasitic capacitance. Conventional resistor materials andfabrication methods, however, present a number of challenges.

In one approach, the sheet resistivity of various resistors formed overan entire wafer may vary and go beyond specifications due to poorprocess control. In an advanced manufacturing line, wafers out ofspecification are often scrapped for quality control, which isexpensive.

One material used for resistors is doped polysilicon. A problem withthis conventional resistor material is that it can only provide alimited resistance within a limited dimension, which presents problemsas further miniaturization of the device features continues. Resistivethin films such as chromium silicide (CrSi) and tantalum nitride (TaN)are also used as resistors in semiconductor devices. Prior art metalnitride resistors such as TaN are generally formed by physical vapordeposition and as such the nitrogen content within such resistors isless than 50 atomic percent. Manufacturing metal nitride resistorshaving a nitrogen content that is greater than 50 atomic percent, %,nitrogen is not possible using prior art deposition techniques due tonitrogen poison related problems which are inherently present in suchdeposition processes.

SUMMARY

In one aspect of the present application, a semiconductor structurecontaining at least two metal resistor structures having differentamounts of nitrogen on the resistor surface is provided. The resultedresistances (and hence resisitivty) of the two metal resistors can beeither the same or different. In one embodiment of the presentapplication, the semiconductor structure may include a first metalresistor structure located on a portion of a dielectric-containingsubstrate. The first metal resistor structure includes, from bottom totop, a first metal layer portion and a first nitridized metal surfacelayer having a first nitrogen content. The semiconductor structurefurther includes a second metal resistor structure located on a secondportion of the dielectric-containing substrate and spaced apart from thefirst metal resistor structure. The second metal resistor structureincludes, from bottom to top, a second metal layer portion and a secondnitridized metal surface layer having a second nitrogen content thatdiffers from the first nitrogen content.

In another aspect of the present application, a method of forming asemiconductor structure containing at least two metal resistorstructures having different amounts of nitrogen on the resistor surfaceis provided. The resulted resistances (and hence resisitivty) of the twometal resistors can be either the same or different. In one embodiment,the method may include providing a dielectric-containing substrateincluding at least an interconnect dielectric material layer. Next, afirst metal layer portion is formed on a first portion of a topmostsurface of the interconnect dielectric material layer, and a secondmetal layer portion is also formed on a second portion of the topmostsurface of the interconnect dielectric material layer. A firstnitridation process is then performed to provide a first nitridizedmetal surface layer having a first nitrogen content within the firstmetal layer portion, wherein the first metal layer portion and the firstnitridized metal surface layer provide a first metal resistor structure.Next, a second nitridation process is performed to provide a secondnitridized metal surface layer having a second nitrogen content thatdiffers from the first nitrogen content within the second metal layerportion, wherein the second metal layer portion and the secondnitridized metal surface layer provide a second metal resistorstructure.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross sectional view of an exemplary semiconductor structureincluding at least one conductive region embedded in a base interconnectdielectric material layer that can be employed in accordance with anembodiment of the present application.

FIG. 2 is a cross sectional view of the exemplary semiconductorstructure of FIG. 1 after forming a dielectric stack of, from bottom totop, a base dielectric capping layer and an interconnect dielectricmaterial layer.

FIG. 3 is cross sectional view of the exemplary semiconductor structureof FIG. 2 after forming a metal layer over the dielectric stack.

FIG. 4 is a cross sectional view of the exemplary semiconductorstructure of FIG. 3 after patterning the metal layer to provide at leasta first metal layer portion and a second metal layer portion that arespaced apart from each other.

FIG. 5 is a cross sectional view of the exemplary semiconductorstructure of FIG. 4 after forming a first block mask over the secondmetal layer portion, while leaving the first metal layer portion exposedfor further processing.

FIG. 6 is a cross sectional view of the exemplary semiconductorstructure of FIG. 5 after performing a first nitridation process to forma first nitridized metal surface layer having a first nitrogen content.

FIG. 7 is a cross sectional view of the exemplary semiconductorstructure of FIG. 6 after removing the first block mask and forming asecond block mask atop the first nitridized metal surface layer.

FIG. 8 is a cross sectional view of the exemplary semiconductorstructure of FIG. 7 after performing a second nitridation process toform a second nitridized metal surface layer having a second nitrogencontent that differs from the first nitrogen content.

FIG. 9 is a cross sectional view of the exemplary semiconductorstructure of FIG. 8 after removing the second block mask.

FIG. 10 is a cross sectional view of the exemplary semiconductorstructure of FIG. 9 after forming a dielectric capping layer.

FIG. 11 is a cross sectional view of the exemplary semiconductorstructure of FIG. 10 after forming a contact structure.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “beneath” or “under” another element, it can bedirectly beneath or under the other element, or intervening elements maybe present. In contrast, when an element is referred to as being“directly beneath” or “directly under” another element, there are nointervening elements present.

Referring first to FIG. 1, there is illustrated an exemplarysemiconductor structure including at least one conductive region 12embedded in a base interconnect dielectric material layer 10 that can beemployed in accordance with an embodiment of the present application. By“embedded” it is meant that are least a portion of each conductiveregion 12 is contained between a topmost surface and a bottommostsurface of the base interconnect dielectric material layer 10. In someembodiments, and as shown, the topmost surface of each conductive region12 is coplanar with a topmost surface of the base interconnectdielectric material 10 and a bottommost surface of the each conductiveregion 12 is located between the topmost surface and the bottommostsurface of the base interconnect dielectric material layer 10.

The base interconnect dielectric material layer 10 may be located upon asubstrate (not shown in the drawings of the present application). Thesubstrate, which is not shown, may be composed of a semiconductingmaterial, an insulating material, a conductive material or anycombination thereof. When the substrate is composed of a semiconductingmaterial, any material having semiconductor properties such as, forexample, Si, SiGe, SiGeC, SiC, Ge alloys, III/V compound semiconductorsor II/VI compound semiconductors, may be used. In addition to theselisted types of semiconducting materials, the substrate that is locatedbeneath the base interconnect dielectric material layer 10 can be alayered semiconductor such as, for example, Si/SiGe, Si/SiC,silicon-on-insulators (SOIs) or silicon germanium-on-insulators (SGOIs).

When the substrate is an insulating material, the insulating materialcan be an organic insulator, an inorganic insulator or any combinationthereof including multilayers. When the substrate is a conductivematerial, the substrate may include, for example, polySi, an elementalmetal, alloys of elemental metals, a metal silicide, a metal nitride orany combination thereof including multilayers. When the substrate iscomposed of a semiconducting material, one or more semiconductor devicessuch as, for example, complementary metal oxide semiconductor (CMOS)devices can be fabricated thereon. When the substrate is composed of acombination of an insulating material and a conductive material, thesubstrate may represent an underlying interconnect level of amultilayered interconnect structure.

The base interconnect dielectric material layer 10 that is employed inthe present application may be composed of any interlevel or intraleveldielectric including inorganic dielectrics or organic dielectrics. Inone embodiment, the base interconnect dielectric material layer 10 maybe non-porous. In another embodiment, the base interconnect dielectricmaterial layer 10 may be porous. Some examples of suitable dielectricsthat can be used as the base interconnect dielectric material layer 10include, but are not limited to, SiO₂, silsesquioxanes, C doped oxides(i.e., organosilicates) that include atoms of Si, C, O and H,thermosetting polyarylene ethers, or multilayers thereof. The term“polyarylene” is used in this application to denote aryl moieties orinertly substituted aryl moieties which are linked together by bonds,fused rings, or inert linking groups such as, for example, oxygen,sulfur, sulfone, sulfoxide, carbonyl and the like.

The base interconnect dielectric material layer 10 typically has adielectric constant that is about 4.0 or less, with a dielectricconstant of about 2.8 or less being more typical. All dielectricconstants mentioned herein are relative to a vacuum, unless otherwisenoted. These dielectrics generally have a lower parasitic cross talk ascompared with dielectric materials that have a higher dielectricconstant than 4.0. The thickness of the base interconnect dielectricmaterial layer 10 may vary depending upon the type of dielectricmaterial(s) used. In one example, the base interconnect dielectricmaterial layer 10 may have a thickness from 50 nm to 1000 nm. Otherthicknesses that are lesser than, or greater than, the aforementionedthickness range may also be employed in the present application for thethickness of the base interconnect dielectric material layer 10.

As stated above, at least one conductive region 12 is embedded in thebase interconnect dielectric material layer 10. The at least oneconductive region 12 can be formed by first providing at least oneopening into the base interconnect dielectric material layer 10, andthen filling the at least one opening with a conductive material.

The at least one opening that is formed into the base interconnectdielectric material layer 10 can be formed utilizing a patterningprocess. In one embodiment, the patterning process may includelithography and etching. The lithographic process includes forming aphotoresist (not shown) atop the base interconnect dielectric materiallayer 10, exposing the photoresist to a desired pattern of radiation anddeveloping the exposed photoresist utilizing a conventional resistdeveloper. The photoresist may be a positive-tone photoresist, anegative-tone photoresist or a hybrid-tone photoresist. In someembodiments, a hard mask such as, for example, a layer of silicondioxide and/or silicon nitride, can be interposed between thephotoresist and the base interconnect dielectric material layer 10. Theetching process includes a dry etching process (such as, for example,reactive ion etching, ion beam etching, plasma etching or laserablation), and/or a wet chemical etching process. Typically, reactiveion etching is used in providing the at least one opening into at leastthe base interconnect dielectric material layer 10. In some embodiments,the etching process includes a first pattern transfer step in which thepattern provided to the photoresist is transferred to the hard mask, thepatterned photoresist is then removed by an ashing step, and thereafter,a second pattern transfer step is used to transfer the pattern from thepatterned hard mask into the underlying base interconnect dielectricmaterial layer 10.

The depth of the at least one opening that is formed into the baseinterconnect dielectric material layer 10 (measured from the topmostsurface of the base interconnect dielectric material layer 10 to thebottom wall of the at least one opening) may vary. In some embodiments,the at least one opening may extend entirely through the baseinterconnect dielectric material layer 10. In yet other embodiments, theat least one opening stops within the base interconnect dielectricmaterial layer 10 itself. In yet further embodiments, different depthopenings can be formed into the base interconnect dielectric materiallayer 10.

The at least one opening that is formed into the base interconnectdielectric material layer 10 may be a via opening, a line opening,and/or a combined via/line opening. In one embodiment, and when acombined via/line opening is formed, a via opening can be formed firstand then a line opening is formed atop and in communication with the viaopening. In another embodiment, and when a combined via/line opening isformed, a line opening can be formed first and then a via opening isformed atop and in communication with the line opening. In FIG. 1, andby way of an example, the at least one opening that houses the at leastone conductive region 12 is shown as a line opening. When a via or lineis formed, a single damascene process (including the above mentionedlithography and etching steps) can be employed. When a combined via/lineis formed a dual damascene process (including at least one iteration ofthe above mentioned lithography and etching steps) can be employed.

Next, a diffusion barrier (not show) can be optionally formed within theat least one opening and atop the base interconnect dielectric materiallayer 10. The diffusion barrier includes Ta, TaN, Ti, TiN, Ru, RuN,RuTa, RuTaN, W, WN or any other material that can serve as a barrier toprevent a conductive material from diffusing there through. Thethickness of the diffusion barrier may vary depending on the depositionprocess used as well as the material employed. In some embodiments, thediffusion barrier may have a thickness from 2 nm to 50 nm; althoughother thicknesses for the diffusion barrier material are contemplatedand can be employed in the present application. The diffusion barriercan be formed by a deposition process including, for example, chemicalvapor deposition (CVD), plasma enhanced chemical vapor deposition(PECVD), atomic layer deposition (ALD), physical vapor deposition (PVD),sputtering, chemical solution deposition or plating.

In some embodiments, an optional plating seed layer (not specificallyshown) can be formed on the surface of the diffusion barrier. In casesin which the conductive material to be subsequently and directly formedon the diffusion barrier, the optional plating seed layer is not needed.The optional plating seed layer is employed to selectively promotesubsequent electroplating of a pre-selected conductive metal or metalalloy. The optional plating seed layer may be composed of Cu, a Cualloy, Ir, an Ir alloy, Ru, a Ru alloy (e.g., TaRu alloy) or any othersuitable noble metal or noble metal alloy having a low metal-platingoverpotential. Typically, Cu or a Cu alloy plating seed layer isemployed, when a Cu metal is to be subsequently formed within the atleast one opening. The thickness of the optional seed layer may varydepending on the material of the optional plating seed layer as well asthe technique used in forming the same. Typically, the optional platingseed layer has a thickness from 2 nm to 80 nm. The optional plating seedlayer can be formed by a conventional deposition process including, forexample, CVD, PECVD, ALD, or PVD.

A conductive material (which after deposition and planarization formsthe at least one conductive region 12 shown in FIG. 1) is then formedwithin the at least one opening and atop the base interconnectdielectric material layer 10. The conductive material may be composed ofpolySi, SiGe, a conductive metal, an alloy comprising at least oneconductive metal, a conductive metal silicide or combinations thereof.In one embodiment, the conductive material is a conductive metal such asCu, W or Al. In another embodiment, the conductive material is Cu or aCu alloy (such as AlCu). The conductive material may be formed by adeposition process including chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), sputtering, chemicalsolution deposition or plating. In one embodiment, a bottom-up platingprocess is employed in forming the conductive material of the at leastone conductive region 12.

Following the deposition of the conductive material, a planarizationprocess such as, for example, chemical mechanical polishing (CMP) and/orgrinding, can be used to remove all conductive material (i.e.,overburden material) that is present outside the at least one openingforming the at least one conductive region 12 embedded within the baseinterconnect dielectric material layer 10. The planarization stops on atopmost surface of the base interconnect dielectric material layer 10providing the coplanar structure illustrated in FIG. 1. If a diffusionbarrier and an optional plating seed layer are present, theplanarization process would provide a U-shaped diffusion barrier and aU-shaped plating seed layer within the at least one opening. TheU-shaped diffusion barrier and the U-shaped plating seed layer would beinterposed between the base interconnect dielectric material layer 10and the at least one conductive region 12. Also, the U-shaped diffusionbarrier and the U-shaped plating seed layer would each have a topmostsurface that is coplanar with a topmost surface of both the baseinterconnect dielectric material layer 10 and the at least oneconductive region 12.

Referring now to FIG. 2, there is illustrated the exemplarysemiconductor structure of FIG. 1 after forming a dielectric stack of,from bottom to top, a base dielectric capping layer 14 and aninterconnect dielectric material layer 16. In some embodiments of thepresent application, the base dielectric capping layer 14 may be omittedsuch that the interconnect dielectric material layer 16 is formeddirectly upon the base interconnect dielectric material layer 10.Collectively, the base interconnect dielectric material layer 10, ifpresent, the base dielectric capping layer 14, and the interconnectdielectric material layer 16 are dielectric components of adielectric-containing substrate of the present application.

When present, the base dielectric capping layer 14 is formed on theexposed topmost surfaces of the base interconnect dielectric materiallayer 10 and the at least one conductive region 12. The base dielectriccapping layer 14 can include any suitable dielectric capping materialsuch as, for example, SiC, Si₄NH₃, SiO₂, a carbon doped oxide, anitrogen and hydrogen doped silicon carbide SiC(N,H) or multilayersthereof. The base dielectric capping layer 14 can be formed utilizing aconventional deposition process such as, for example, chemical vapordeposition, plasma enhanced chemical vapor deposition, chemical solutiondeposition, evaporation, or atomic layer deposition. The thickness ofthe base dielectric capping layer 14 may vary depending on the techniqueused to form the same as well as the material make-up of the layer.Typically, the base dielectric capping layer 14 has a thickness from 15nm to 100 nm. Other thicknesses that are lesser than, or greater thanthe aforementioned thickness range may also be employed as the thicknessof the base dielectric capping layer 14.

The interconnect dielectric material layer 16 may be composed of one ofthe dielectric materials mentioned above for the base interconnectdielectric material layer 10; the interconnect dielectric material layer16 can be referred to as a second interconnect dielectric materiallayer, while the base interconnect dielectric material layer 10 may bereferred to as a first interconnect dielectric material layer.

In one embodiment, the interconnect dielectric material layer 16 iscomposed of a same dielectric material as the base interconnectdielectric material layer 10. In another embodiment, the interconnectdielectric material layer 16 is composed of a different dielectricmaterial than the base interconnect dielectric material layer 10. Theinterconnect dielectric material layer 16 can be formed utilizing one ofthe deposition processes mentioned above for forming the baseinterconnect dielectric material layer 10, and the thickness of theinterconnect dielectric material layer 16 is within the range mentionedabove for the base interconnect dielectric material layer 10.

Referring now to FIG. 3, there is illustrated the exemplarysemiconductor structure of FIG. 2 after forming a metal layer 18 overthe dielectric stack (14, 16). The metal layer 18 is a continuous layerthat is formed over the entirety of the dielectric stack (14, 16). As isshown, a bottommost surface of the metal layer 18 is formed directlyupon a topmost surface of the interconnect dielectric material layer 16.

The metal layer 18 that is formed in the present application includes,but is not limited to, TaN, Ta, TiN, Ta, RuN, Ru, CoN, Co, WN, W. TaRuNand/or TaRu. The metal layer 18 can be formed by a deposition processincluding, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), atomic layer deposition (ALD),physical vapor deposition (PVD), sputtering, chemical solutiondeposition or plating. The metal layer 18 that is formed typically has athickness from 2 nm to 50 nm, although other thicknesses are notexcluded.

Referring now to FIG. 4, there is illustrated the exemplarysemiconductor structure of FIG. 3 after patterning the metal layer 18 toprovide at least a first metal layer portion 18L and a second metallayer portion 18R that are spaced apart from each other. The first metallayer portion 18L is located in a first region of thedielectric-containing substrate of the present application, while thesecond metal layer portion 18R is located in a second region of thedielectric-containing substrate of the present application. Although thepresent application describes and illustrates, two metal layer portions(18L, 18R), a plurality of metal layer portions can be formed at thisstep of the present application.

In one embodiment of the present application, the patterning of themetal layer 18 can be performed utilizing lithography and etching asmentioned above in forming the at least one conductive region 12.

At this point of the present application, resistance measurements can beperformed on the individual metal layer portions that are provided bythe patterning of the metal layer 18. In one example, resistancemeasurements can be performed on the first metal layer portion 18L andthe second metal layer portion 18R. The resistance of the individualmetal layer portions (e.g., 18L, 18R) can be performed utilizing anyconventional technique that is capable of measuring the resistance of amaterial. In one example, a four point probe resistivity measurement canbe used to measure the resistance of each individual metal layerportion. In some embodiments and when the resistance measurements of theindividual metal layer portions is not within a pre-determined range,trimming of the individual metal layer portions can be performedutilizing another patterning process. The steps of resistance measuringand trimming may be repeated any number of times to arrive at thepre-determined range. Based on the resistance measurements, one candetermine how much nitrogen is needed to be added during thesubsequently performed nitridation processes. That is, the measuredresistance provides information on a content of nitrogen to be usedduring the first and second nitridation processes.

Referring now to FIG. 5, there is illustrated the exemplarysemiconductor structure of FIG. 4 after forming a first block mask 20over the second metal layer portion 18R, while leaving the first metallayer portion 18L exposed for further processing.

The first block mask 20 may be any suitable block mask material whichprevents nitrogen diffusion therethrough. Examples of suitable blockmask materials that can be employed in the present application include,for example, a photoresist material (as mentioned above), a dielectrichard mask material (as mentioned above), or a combination of, frombottom to top, a dielectric hard mask material and a photoresistmaterial. The first block mask 20 can be formed by first depositing ablanket layer of a block mask material. The block mask material may bedeposited by chemical vapor deposition, plasma enhanced chemical vapordeposition, physical vapor deposition, spin-on coating or anycombination thereof. Following the deposition of the blanket layer ofblock mask material, the blanket layer of block mask material ispatterned. In some embodiments, patterning of the blanket layer of blockmask material may include lithography only. Such an embodiment isemployed when the blanket layer of block mask material consists only ofa photoresist material. In other embodiments, patterning of the blanketlayer of block mask material may include lithography, followed by anetch. Such an embodiment may be employed when the blanket layer of blockmask material consists of only a hard mask material or a hard maskmaterial/photoresist material stack.

The first block mask 20 has a thickness that is sufficient to preventnitrogen diffusion therethrough. In one embodiment of the presentapplication, the first block mask 20 has a thickness from 25 nm to 200nm. Other thicknesses that are lesser than, or greater than theaforementioned range can be employed so long as the thickness of thefirst block mask 20 is sufficient to prevent nitrogen diffusiontherethrough.

Referring now to FIG. 6, there is illustrated the exemplarysemiconductor structure of FIG. 5 after performing a first nitridationprocess to form a first nitridized metal surface layer 22L having afirst nitrogen content; no nitridation occurs in the region of theexemplary semiconductor structure that is protected by the first blockmask 20. The first nitridized metal surface layer 22L is formed within asurface of the first metal layer portion 18L.

The first nitridation process may also be referred to herein as a firstnitride surface treatment process. The first nitridized metal surfacelayer 22L may also be referred to herein as a first nitrogen enrichedmetal surface layer. By “nitrogen enriched metal surface layer” it ismeant, that the exposed upper surface of the metal layer portion has ahigher nitrogen content therein after performing the nitridation processas compared to the originally deposited metal layer 18.

In one embodiment, the first nitridation process used in forming thefirst nitridized metal surface layer 22L is a thermal nitridationprocess. The thermal nitridation process that is employed in the presentapplication does not include an electrical bias higher than 200 W. Insome embodiments, no electrical bias is performed during the thermalnitridation process. The thermal nitridation process employed in thepresent application is performed in any nitrogen-containing ambient,which is not in the form of a plasma. The nitrogen-containing ambientsthat can be employed in the present application include, but are notlimited to, N₂, NH₃, NH₄, NO, or NH_(x) wherein x is between 0 and 1.Mixtures of the aforementioned nitrogen-containing ambients can also beemployed in the present application. In some embodiments, thenitrogen-containing ambient is used neat, i.e., non-diluted. In otherembodiments, the nitrogen-containing ambient can be diluted with aninert gas such as, for example, He, Ne, Ar and mixtures thereof. In someembodiments, H₂ can be used to dilute the nitrogen-containing ambient.

Notwithstanding whether the nitrogen-containing ambient is employed neator diluted, the content of nitrogen within the nitrogen-containingambient employed in the present application is typically from 10% to100%, with a nitrogen content within the nitrogen-containing ambientfrom 50% to 80% being more typical. In one embodiment, the thermalnitridation process employed in the present application is performed ata temperature from 50° C. to 450° C. In another embodiment, the thermalnitridation process employed in the present application is performed ata temperature from 100° C. to 300° C.

In addition to a thermal nitridation process, the formation of the firstnitridized metal surface layer 22L can include a plasma nitridationprocess. When a plasma nitridation process is employed, an electricalbias of greater than 200 W can be employed. The plasma nitridationprocess is performed by generating a plasma from one of thenitrogen-containing ambients that is mentioned above for the thermalnitridation process. In one embodiment, the plasma nitridation processemployed in the present application is performed at a temperature from50° C. to 450° C. In another embodiment, the plasma nitridation processemployed in the present application is performed at a temperature from100° C. to 300° C.

Notwithstanding the type of nitridation employed, the depth of the firstnitridized metal surface layer 22L may vary. Typically, the depth of thefirst nitridized metal surface layer 22L, as measured from the topmostexposed surface of the first metal layer portion 18L inward, is from 0.5nm to 20 nm, with a depth from 1 nm to 10 nm being more typical.

The first nitridized metal surface layer 22L is composed of a same metalas the first metal layer portion 18L with added nitrogen. In someembodiments, the first nitrogen content (which is a combination of addednitrogen plus any nitrogen that may be present in the metal layer 18) ofthe first nitridized metal surface layer 22L is 10 atomic percent orgreater. In one embodiment of the present application, the firstnitrogen content of the first nitridized metal surface layer 22L can befrom 10 atomic percent nitrogen to 50 atomic percent nitrogen. Nitrogencontents of less than 10 atomic percent are also contemplated. When themetal layer 18 and hence the first metal layer portion 18L include ametal nitride, a nitrogen gradient may be formed between the first metallayer portion 18L and the first nitridized metal surface layer 22L.

The thickness of the first nitridized metal surface layer 22L is thesame as the depth mentioned above. That is, the first nitridized metalsurface layer 22L may, for example, have a thickness from 0.5 nm to 20nm. Collectively, the first metal portion 18L and the first nitridizedmetal surface layer 22L provide a first metal resistor structure of thepresent application.

At this point of the present application, resistance measurements can beperformed on the first metal resistor structure (18L, 22L). Theresistance of the first metal resistor structure (18L, 22L) can bemeasured utilizing any conventional technique that is capable ofmeasuring the resistance of a material or a material stack. In oneexample, a four point probe resistivity measurement can be used tomeasure the resistance of the first metal resistor structure (18L, 22L).In some embodiments and when the resistance measurements of the firstmetal resistor structure (18L, 22L) is not within a pre-determinedrange, trimming of the individual first metal resistor structure (18L,22L) can be performed utilizing a patterning process. The steps ofresistance measuring and trimming may be repeated any number of times toarrive at the pre-determined range.

Referring now to FIG. 7, there is illustrated the exemplarysemiconductor structure of FIG. 6 after removing the first block mask 20and forming a second block mask 24 atop the first nitridized metalsurface layer 22L. The first block mask 20 can be removed utilizingtechniques well known in the art. For example, the first block mask 20may be removed by ashing, planarization (such as, for example, chemicalmechanical polishing) and/or etching.

The second block mask 24 is formed on the first nitridized metal surfacelayer 22L, while leaving the second metal layer portion 18R exposed andavailable for further processing. In the present application, thelocation of first block mask formation and second block mask formationmay be reversed such that the second metal layer portion 18R isprocessed prior to the first metal layer portion 18L.

The second block mask 24 may include one of the block mask materialsmentioned above for the first block mask 20. The second block mask 24may be formed utilizing the technique(s) mentioned above in forming thefirst block mask 20. The second block mask 24 may have a thickness inthe range mentioned above for the first block mask 20.

Referring now to FIG. 8, there is illustrated the exemplarysemiconductor structure of FIG. 7 after performing a second nitridationprocess to form a second nitridized metal surface layer 22R having asecond nitrogen content that differs from the first nitrogen content; nonitridation occurs in the region of the exemplary semiconductorstructure that is protected by the second block mask 24. The secondnitridized metal surface layer 22R is formed within a surface of thesecond metal layer portion 18R.

The second nitridized metal surface layer 22R is composed of a samemetal as the second metal layer portion 18R with added nitrogen. In oneembodiment of the present application, the second nitrogen content(which is a combination of added nitrogen plus any nitrogen that may bepresent in the metal layer 18) is greater than the first nitrogencontent. In another embodiment, the second nitrogen content is less thanthe first nitrogen content. In one embodiment, the second nitrogencontent is 10 atomic percent or greater. In one example of the presentapplication, the second nitrogen content of the second nitridized metalsurface layer 22R can be from 10 atomic percent nitrogen to 80 atomicpercent nitrogen. A nitrogen content of less than 10 atomic percent isalso contemplated. In the present application, at least one of the firstand second nitrogen contents may be 10 atomic percent or greater.Typically, but not always, both the first and second nitrogen contentsare 10 atomic percent or greater. When the metal layer 18 and hence thesecond metal layer portion 18R include a metal nitride, a nitrogengradient may be formed between the second metal layer portion 18R andthe second nitridized metal surface layer 22R.

The second nitridation process may also be referred to herein as asecond nitride surface treatment process. The second nitridized metalsurface layer 22R may also be referred to herein as a second nitrogenenriched metal surface layer. The term “nitrogen enriched metal surfacelayer” has the same meaning as defined above.

In one embodiment, the second nitridation process used in forming thesecond nitridized metal surface layer 22R is a thermal nitridationprocess. The thermal nitridation process that may be employed as thesecond nitridation process is the same as defined above provided thatthe conditions are chosen to ensure that the content of nitrogen addedto the second metal layer portion 18R differs from the content ofnitrogen added in the first metal layer portion 18L. In one example, thenitrogen-containing ambient used in the first nitridation processcomprises a different nitrogen content than the nitrogen-containingambient used in the second nitridation process.

In another embodiment, the second nitridation process used in formingthe second nitridized metal surface layer 22R is a plasma nitridationprocess. The plasma nitridation process that may be employed as thesecond nitridation process is the same as defined above provided thatthe conditions are chosen to ensure that the content of nitrogen addedto the second metal layer portion 18R differs from the content ofnitrogen added in the first metal layer portion 18L. In one example, thenitrogen-containing ambient used in the first nitridation processcomprises a different nitrogen content than the nitrogen-containingambient used in the second nitridation process.

Notwithstanding the type of nitridation employed, the depth of thesecond nitridized metal surface layer 22R may vary. Typically, the depthof the second nitridized metal surface layer 22R, as measured from thetopmost exposed surface of the second metal layer portion 18R inward, isfrom 0.5 nm to 20 nm, with a depth from 1 nm to 10 nm being moretypical. As described above for the first nitridized metal surface layer22L, this depth also determines the thickness of the second nitridizedmetal surface layer 22R.

In some embodiments, the second nitridized metal surface layer 22R has abottommost surface that is coplanar with a bottommost surface of thefirst nitridized metal surface layer 22L. In such an embodiment, thetopmost surface of the second nitridized metal surface layer 22R iscoplanar with a topmost surface of the first nitridized metal surfacelayer 22L. In another embodiment, the second nitridized metal surfacelayer 22R has a bottommost surface that is not coplanar with abottommost surface of the first nitridized metal surface layer 22L. Insuch an embodiment, the topmost surface of the second nitridized metalsurface layer 22R is however coplanar with a topmost surface of thefirst nitridized metal surface layer 22L.

Collectively, the second metal portion 18R and the second nitridizedmetal surface layer 22R provide a second metal resistor structure of thepresent application. At this point of the present application,resistance measurements can be performed on the second metal resistorstructure (18R, 22R). The resistance of the second metal resistorstructure (18R, 22R) can be measured utilizing any conventionaltechnique that is capable of measuring the resistance of a material or amaterial stack. In one example, a four point probe resistivitymeasurement can be used to measure the resistance of the second metalresistor structure (18R, 22R). In some embodiments and when theresistance measurements of the second metal resistor structure (18R,22R) is not within a pre-determined range, trimming of the second metalresistor structure (18R, 22R) can be performed utilizing a patterningprocess. The steps of resistance measuring and trimming may be repeatedany number of times to arrive at the pre-determined range.

The various trimming processes of the present application can make thefirst metal resistor structure to have a resistance (and henceresistivity) that is the same or different from the second metalresistor structure.

Referring now to FIG. 9, there is illustrated the exemplarysemiconductor structure of FIG. 8 after removing the second block mask24. The second block mask 24 may be removed utilizing one of thetechniques mentioned above in removing the first block mask 20. Whenadditional metal layer portions are formed, the above processing of maskformation, nitridation, resistance measuring of the resultant metalresistor structure, and trimming can be performed.

Referring now to FIG. 10, there is illustrated the exemplarysemiconductor structure of FIG. 9 after forming a dielectric cappinglayer 26. The dielectric capping layer 26 used may include one of thedielectric capping materials mentioned above for the base dielectriccapping layer 14. The dielectric capping layer 26 may be formedutilizing one of the deposition processes mentioned above in forming thebase dielectric capping layer 14. The dielectric capping layer 26 mayhave a thickness in the range mentioned above for the base dielectriccapping layer 14.

As is shown, the dielectric capping layer 26 is formed on exposedsurfaces (topmost and sidewall surfaces) of the first metal resistorstructure (18L, 22L), and on exposed surfaces (topmost and sidewallsurfaces) of the second metal resistor structure (18R, 22R), and on theexposed surface of the dielectric stack (14, 16). In the presentapplication, the various components of the first metal resistorstructure (18L, 22L) are vertically aligned to each other, while thevarious components of the second metal resistor structure (18R, 22R) arevertically aligned with each other.

Referring now to FIG. 11, there is illustrated the exemplarysemiconductor structure of FIG. 10 after forming a contact structure.Contact structure includes a dielectric material 28 that includes metalcontact structures 30L, 30R embedded therein. Metal contact structure30L extends through the dielectric material 28 and contacts a topmostsurface of the first nitridized metal surface layer 22L (i.e., thetopmost surface of the first metal resistor structure), while metalcontact structure 30R extends through the dielectric material 28 andcontacts a topmost surface of the second nitridized metal surface layer22R (i.e., the topmost surface of the second metal resistor structure).

The dielectric material 28 may be composed of one of the dielectricmaterials mentioned above for the base interconnect dielectric materiallayer 10. In one embodiment, the dielectric material 28 may be composedof a same dielectric material as the base interconnect dielectricmaterial layer 10. In another embodiment, the dielectric material 28 maybe composed of a different dielectric material than the baseinterconnect dielectric material layer 10. The dielectric material 28can be formed utilizing one of the techniques mentioned above for thebase interconnect dielectric material layer 10. The thickness of thedielectric material 28 can also be within the range mentioned above forthe base interconnect dielectric material layer 10. Typically, thethickness of the dielectric material 28 is greater than the thickness ofthe base interconnect dielectric material layer 10.

The metal contact structures 30L, 30R can include one of the conductivemetals/metal alloys mentioned above for conductive regions 12. In oneembodiment, the metal contact structures 30L, 30R may be composed of asame conductive metal/metal alloy as the conductive metal/metal alloythat provides the conductive region 12. In another embodiment, the metalcontact structures 30L, 30R may comprise a different conductive materialthan the conductive material that provides the conductive regions 12.The metal contact structures 30L, 30R can be formed utilizing the sametechnique as mentioned above for forming the conductive regions 12. Thatis, lithography, etching and filling openings with a conductive materialcan be employed. In some embodiments, a diffusion barrier and a platingseed layer can be formed prior to filling the openings with theconductive metal/metal alloy. Following the filling of the openings withat least the conductive material, a planarization process can beperformed in order to form the structure illustrated in FIG. 11.

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A semiconductor structure comprising: a firstmetal resistor structure located on a portion of a dielectric-containingsubstrate, said first metal resistor structure comprises, from bottom totop, a first metal layer portion and a first nitridized metal surfacelayer having a first nitrogen content; and a second metal resistorstructure located on a second portion of said dielectric-containingsubstrate and spaced apart from said first metal resistor structure,wherein said second metal resistor structure comprises, from bottom totop, a second metal layer portion and a second nitridized metal surfacelayer having a second nitrogen content that differs from said firstnitrogen content.
 2. The semiconductor structure of claim 1, whereinsaid dielectric-containing substrate comprises, from bottom to top, abase interconnect dielectric material layer, a base dielectric cappinglayer, and an interconnect dielectric material layer, wherein said baseinterconnect dielectric material layer comprises at least one conductiveregion embedded therein.
 3. The semiconductor structure of claim 1,wherein at least one of said first nitrogen content and said secondnitrogen content is 10 atomic percent or greater.
 4. The semiconductorstructure of claim 1, wherein said first metal resistor structure has adifferent resistivity than said second metal resistor structure.
 5. Thesemiconductor structure of claim 1, wherein a dielectric capping layeris present on said first metal resistor structure and said second metalresistor structure.
 6. The semiconductor structure of claim 5, wherein aportion of the dielectric capping layer is present on sidewall surfacesof the first and second metal resistor structures, and contacting anexposed surface of said dielectric-containing substrate.
 7. Thesemiconductor structure of claim 1, wherein said first nitridized metalsurface layer, said first metal layer portion, said second nitridizedmetal surface layer and said second metal layer portion each comprises asame metal or metal alloy.
 8. The semiconductor structure of claim 7,wherein said metal or metal alloy is selected from TaN, Ta, TiN, Ta,RuN, Ru, CoN, Co, WN, W, TaRuN and TaRu.
 9. The semiconductor structureof claim 1, wherein sidewall surfaces of said first nitridized metalsurface layer and said first metal layer portion are vertically alignedwith each other, and wherein sidewall surfaces of said second nitridizedmetal surface layer and said second metal layer portion are verticallyaligned with each other.
 10. The semiconductor structure of claim 1,further comprising a contact structure formed surrounding said first andsecond metal resistor structures, wherein said contact structureincludes metal contacts extending to a topmost surface of each of saidfirst metal resistor structure and said second metal resistor structure.11. A method of forming a semiconductor structure, said methodcomprising: providing a dielectric-containing substrate comprising atleast an interconnect dielectric material layer; forming a first metallayer portion on a first portion of a topmost surface of saidinterconnect dielectric material layer, and a second metal layer portionon a second portion of said topmost surface of said interconnectdielectric material layer performing a first nitridation process toprovide a first nitridized metal surface layer having a first nitrogencontent within said first metal layer portion, wherein said first metallayer portion and said first nitridized metal surface layer provide afirst metal resistor structure; and performing a second nitridationprocess to provide a second nitridized metal surface layer having asecond nitrogen content that differs from said the first nitrogencontent within said second metal layer portion, wherein said secondmetal layer portion and said second nitridized metal surface layerprovide a second metal resistor structure.
 12. The method of claim 11,wherein said providing said dielectric-containing substrate comprises:forming a base dielectric capping layer on a surface of a baseinterconnect dielectric material layer, said base interconnectdielectric material layer containing at least one conductive regionembedded therein; and forming said interconnect dielectric materiallayer on said base dielectric capping layer.
 13. The method of claim 11,wherein at least one of said first nitridation process and said secondnitridation process comprises a thermal nitridation process, whereinsaid thermal nitridation process is performed at a temperature from 50°C. to 450° C. in a nitrogen-containing ambient, wherein saidnitrogen-containing ambient used in said first nitridation processcomprises a different nitrogen content than said nitrogen-containingambient used in said second nitridation process.
 14. The method of claim11, wherein at least one of said first nitridation process and saidsecond nitridation process comprises a plasma nitridation process,wherein said plasma nitridation process is performed at a temperaturefrom 50° C. to 450° C. in a nitrogen-containing ambient, wherein saidnitrogen-containing ambient used in said first nitridation processcomprises a different nitrogen content than said nitrogen-containingambient used in said second nitridation process.
 15. The method of claim11, wherein at least one of said first nitrogen content and said secondnitrogen content is 10 atomic percent or greater.
 16. The method ofclaim 11, further comprising measuring resistance of both said firstmetal layer portion and said second metal layer portion prior toperforming said first and second nitridation processes, wherein saidresistance provides information on a content of nitrogen to be usedduring said first and second nitridation processes.
 17. The method ofclaim 11, further comprising forming a dielectric capping layer on saidfirst metal resistor structure and said second metal resistor structure.18. The method of claim 11, further comprising measuring resistance ofsaid first metal resistor structure prior to said performing said secondnitridation process, and optionally performing a trimming process. 19.The method of claim 11, further comprising measuring resistance of saidsecond metal resistor structure after said performing said secondnitridation process, and optionally performing a trimming process. 20.The method of claim 11, further comprising forming a contact structuresurrounding said first and second metal resistor structures, whereinsaid contact structure includes metal contacts extending to a topmostsurface of each of said first metal resistor structure and said secondmetal resistor structure.